advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 60v simple drive requirement r ds(on) 10.5m fast switching performance i d 74a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.8 pulsed drain current 1 300 total power dissipation 104 drain current, v gs @ 10v 74 drain current, v gs @ 10v 48 drain-source voltage 60 gate-source voltage + 20 1 ap9974gh/j-hf halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 3 201412223 parameter rating g d s g d s to-251(j) g d s to-252(h) ap9974 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap9974gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 10.5 m ? v gs =4.5v, i d =30a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 50 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 43 69 nc q gs gate-source charge v ds =48v - 8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 31 - nc t d(on) turn-on delay time v ds =30v - 14 - ns t r rise time i d =30a - 48 - ns t d(off) turn-off delay time r g =3.3 -42- ns t f fall time v gs =10v - 67 - ns c iss input capacitance v gs =0v - 3180 5100 pf c oss output capacitance v ds =25v - 495 - pf c rss reverse transfer capacitance f=1.0mhz - 460 - pf r g gate resistance f=1.0mhz - 1 1.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v t rr reverse recovery time i s =30a, v gs =0 v , - 45 - ns q rr reverse recovery charge di/dt=100a/s - 40 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9974gh/j-hf
a p9974gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7 .0v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10 v 7 .0v 5.0 v 4.5 v v g = 3.0 v 4 6 8 10 12 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
ap9974gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 20406080100 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =30v v ds =38v v ds =48v 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 20 40 60 80 100 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on)
ap9974gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 9974gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 9974gh ywwsss meet rohs requirement for low voltage mosfet only
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